ST fw3n150 p3n150 w3n150 free download

File name stfw3n150_stp3n150_stw3n150.pdf

STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 , 2.5 A, PowerMESHTM Power MOSFET in TO-220, TO-247, TO-3PF Features RDS(on) Type VDSS ID PTOT max. STFW3N150 1500 V <9 2.5 A 63 W 3 2 STP3N150 1500 V <9 2.5 A 140 W 1 STW3N150 1500 V <9 2.5 A 140 W TO-220 100% avalanche tested Intrinsic capacitances and Qg minimized 3 3 High speed switching 1 2 2 1 Fully isolated TO-3PF plastic package TO-247 TO-3PF Creepage distance path is 5.4 mm (typ.) for TO-3PF Figure 1. Internal schematic diagram Application Switching applications Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Order codes Marking Package Packaging STFW3N150 3N150 TO-3PF Tube STP3N150 3N150 TO-220 Tube STW3N150 3N150 TO-247 Tube June 2010 Doc ID 13102 Rev 9 1/15 www.st.com 15 Contents STFW3N150, STP3N150, STW3N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .